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Transistor
2SD2345
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
1.60.15
s Features
q q q q
0.4
0.80.1
0.4
High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV.
1.60.1
1.00.1
0.5
1
0.5
3
2
0.450.1 0.3
0.750.15
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings 50 40 15 100 50 125 125 -55 ~ +125
Unit V V V mA mA mW C C
1:Base 2:Emitter 3:Collector
EIAJ:SC-75 SS-Mini Type Package
Marking symbol : 1Z
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency
(Ta=25C)
Symbol ICBO ICEO VCBO VCEO VEBO hFE fT
*
Conditions VCB = 20V, IE = 0 VCE = 20V, IB = 0 IC = 10A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCE = 10V, IC = 2mA IC = 10mA, IB = 1mA VCB = 10V, IE = -2mA, f = 200MHz
min
typ
0 to 0.1
0.20.1
max 100 1
0.15-0.05
+0.1
s Absolute Maximum Ratings
(Ta=25C)
0.2-0.05
+0.1
Unit nA A V V V
50 40 15 400 0.05 120 2000 0.2
VCE(sat)
V MHz
*h
FE
Rank classification
R 400 ~ 800 S T hFE 600 ~ 1200 1000 ~ 2000
Rank
1
Transistor
PC -- Ta
150 160 Ta=25C 140 125 100 25C Ta=75C 80 -25C
2SD2345
IC -- VCE
120 VCE=10V
IC -- VBE
Collector power dissipation PC (mW)
Collector current IC (mA)
120 100 80 60 40 20
IB=100A 90A 80A 70A 60A 50A 40A 30A 20A 10A
100
75
Collector current IC (mA)
60
50
40
25
20
0 0 20 40 60 80 100 120 140 160
0 0 2 4 6 8 10 12
0 0 0.4 0.8 1.2 1.6 2.0
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
100 30 10 3 1 0.3 Ta=75C 0.1 0.03 0.01 0.1 25C -25C IC/IB=10 1800
hFE -- IC
250 VCE=10V
fT -- I E
VCB=10V Ta=25C
Forward current transfer ratio hFE
1500
Transition frequency fT (MHz)
30 100
200
1200 Ta=75C 900 25C -25C 600
150
100
300
50
0.3
1
3
10
30
100
0 0.1
0.3
1
3
10
0 - 0.1 - 0.3
-1
-3
-10
-30
-100
Collector current IC (mA)
Collector current IC (mA)
Emitter current IE (mA)
Cob -- VCB
8 100 IE=0 f=1MHz Ta=25C
NV -- IC
VCE=10V GV=80dB Function=FLAT Ta=25C Rg=100k 60 22k 40 5k 20 100
NV -- VCE
Collector output capacitance Cob (pF)
7 6 5 4 3 2 1 0 1 3 10
Rg=100k
Noise voltage NV (mV)
Noise voltage NV (mV)
80
80
60 22k
40 5k
20
30
100
0 0.01
0 0.03 0.1 0.3 1 1 3 10
IC=1mA GV=80dB Function=FLAT Ta=25C 30 100
Collector to base voltage VCB (V)
Collector current IC (mA)
Collector to emitter voltage VCE (V)
2
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A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR

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